Samsung and AMD sign MoU on next-generation AI memory

Samsung Electronics and Advanced Micro Devices (AMD) have signed a memorandum of understanding (MoU) to expand their strategic collaboration on next-generation AI memory and computing technologies.

The agreement centres on the supply of Samsung’s next-generation high-bandwidth memory, known as HBM4, for AMD’s forthcoming Instinct MI455X AI accelerators. It also includes plans to provide optimised DDR5 memory for AMD’s sixth-generation EPYC processors, according to a joint statement.

The companies said they would also explore potential cooperation in semiconductor manufacturing, with Samsung’s foundry business positioned as a possible partner for producing future AMD chips.

The deal builds on an existing relationship between the two firms, with Samsung already supplying HBM3E memory used in AMD’s MI350X and MI355X accelerators. Under the new agreement, Samsung is expected to play a more prominent role as a supplier of advanced memory for AMD’s next generation of AI hardware.

Last month, AMD said it had reached a deal worth up to $60 billion over 5 years with Meta Platforms, the parent company of Facebook.

Samsung has been seeking to strengthen its position in the high-bandwidth memory market, where it faces strong competition from SK Hynix. According to Counterpoint, Samsung holds around 22 percent of the global HBM market, compared with SK Hynix’s leading share of approximately 57 percent.

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